BST-WAOI-300 Patterned wafer inspection designed for post-process inspection of compound and silicon wafers after lithography coating/development, etching, and CMP, the system leverages our proprietary ultra-high-speed, large-field, high-resolution imaging platform to deliver both high defect-detection sensitivity and high throughput throughout wafer manufacturing.
Key Features:
- Supports inspection of 6'/8', and 8'/12' wafer sizes
- Freely configurable combinations of bright-field, dark-field, and DIC imaging modes
- Equipped with DIC capability and switchable multi-magnification micro-objectives
- Detection accuracy: 400 nm (bright-field) | 250 nm (dark-field)
- Handles multi-million-defect datasets with high accuracy, repeatability, and consistency
- MES/EAP integration plus defect statistics and process-analysis tools
